GT30J65MRB,S1E
GT30J65MRB,S1E is a Toshiba Semiconductor and Storage electronic component in Single IGBTs. Specifications: IGBT 650V 60A TO-3P. Purchasing and R&D teams can check this part number
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Product Attributes
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| Reverse Recovery Time (trr) | 200 ns |
| IGBT Type | - |
| Input Type | Standard |
| Power - Max | 200 W |
| Package / Case | TO-3P-3, SC-65-3 |
| Current - Collector (Ic) (Max) | 60 A |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 30A |
| Operating Temperature | 175°C (TJ) |
| Gate Charge | 70 nC |
| Supplier Device Package | TO-3P(N) |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Switching Energy | 1.4mJ (on), 220µJ (off) |
| Td (on/off) @ 25°C | 75ns/400ns |
| Test Condition | 400V, 15A, 56Ohm, 15V |